71410 sy/53007 ms im / d1306 ms pc b8-4681,b8-7410 no.5234-1/7 overview the la6358 is a high-performance dual operational amplifier that can operate from a single voltage power supply. it features a built-in phase correction circ uit. it can also operate from a dual power supply with both positive and negative levels and features low power consumption. the la6358nt can be used in a wide range of industrial applications as a transducer amplifier for all types of transducers, as a dc amplifier circu it, and for other purposes as well. functions ? eliminates need for phase compensation ? wide range of operating supply voltage : 3.0v to 30.0v (single power supply) : 1.5 to 15.0v (dual power supply) ? input voltage swingable down to nearly ground level and output voltage range v out of 0 to v cc -1.5v ? low current dissipation : i cc = 0.5ma typ/v cc = +5v, r l = specifications maximum ratings at ta = 25 c parameter symbol conditions ratings unit maximum supply voltage v cc max 32 v differential input voltage v id 32 v maximum input voltage v in max -0.3 to +32 v allowable power dissipation pd max ta 25 c la6358n, 6358ns 570 mw ta 25 c la6358nm 300 mw ta 25 c la6358nt 170 mw operating temperature topr -30 to +85 c storage temperature tstg -55 to +125 c monolithic linear ic high-performance dual operational amplifiers orderin g numbe r : en5234d la6358n,6358ns, la6358nm,6358nt specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general el ectronics equipment (home appliances, av equipment, communication device, office equipment, industrial equ ipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, t ransportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of re liability and can directly threaten human lives in case of failure or malfunction of the product or may cause har m to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use.
la6358n, 6358ns, 6358nm, 6358nt no.5234-2/7 electrical characteristics at ta = 25 c, v cc = 5.0v, otherwise unless specified. parameter symbol conditions test circuit ratings unit min typ max input offset voltage v io 1 2 7mv input offset current i io i in (+)/i in (-) 2 5 50 na input bias current i b i in (+)/i in (-) 3 45 250 na common-mode input voltage range vicm 4 0 v cc -1.5 v common-mode rejection ratio cmr 4 65 80 db large-amplitude voltage gain vg v cc = 15v, r l 2k 5 25 100 v/mv output voltage range v out 0 v cc -1.5 v supply voltage rejection ratio svr 6 65 100 db channel separation f = 1khz to 20khz 7 120 db current drain i cc 8 0.5 1.2 ma output current (source) i o source v in + = 1v, v in - = 0v 9 20 40 ma output current (sink) i o sink v in + = 0v, v in - = 1v 10 10 20 ma package dimensions unit : mm (typ) unit : mm (typ) 3001d [la6358n] 3017d [la6358ns] unit:mm (typ) 3245b [la6358nt] unit:mm (typ) 3032d [la6358nm] sanyo : dip8(300mil) 9.14 14 85 1.4 1.0 6.4 7.62 0.25 (3.0) 3.9max 0.51min 3.2 (0.76) 2.54 0.5 sanyo : sip9 (0.84) 0.25 1.35 3.0 22.0 0.51 min 5.7 max 3.2 2.54 1.3 0.5 1 9 (4.5) sanyo : mfp8(225mil) 14 85 5.0 0.63 6.4 0.15 0.35 1.27 (0.65) 4.4 (1.5) 1.7max 0.1 sanyo : msop8(150mil) 3.0 1.1max 3.0 0.5 4.9 12 8 0.25 0.65 (0.53) (0.85) 0.125 0.08
la6358n, 6358ns, 6358nm, 6358nt no.5234-3/7 pin assignment equivalent circuit 1 2 3 4 5 6 7 8 9 v cc v out 1 v in -- 1 v in + 1 gnd v in + 2 v in -- 2 v out 2 v cc + -- + -- top view [la6358ns] 1 v out 1 2 v in -- 1 3 v in + 1 4 gnd 8v cc 7v out 2 6v in -- 2 5v in + 2 -- + -- + [la6358n, 6358nm, 6358nt] top view v in -- v in + input v ou t v cc
la6358n, 6358ns, 6358nm, 6358nt no.5234-4/7 test circuits 1. v io 2. i io 3. i b 4. cmr, v icm 5. vg v cc v f 1 v cc r2 r2 r1 r1 v ee c +1.4v null -- + -- + v io = v f 1 1+r2 / r1 v cc v f 2 v cc r r2 r2 r r1 r1 v ee c +1.4v null -- + -- + i io = v f 2-v f 1 r(1+r2 / r1) v cc v f 3 v cc r2 r2 r1 r r1 v ee c +1.4v null -- + -- + v cc v f 4 v cc r2 r2 r1 r1 r v ee c +1.4v null -- + -- + i b = v f 4-v f 3 2r(1+r2 / r1) v cc v f 5, v f 6 v cc r2 r2 ec1, ec2 r1 r1 v ee v ee c null -- + -- + cmr=20 log (e c 1-e c 2)(1+r2 / r1) v f 5-v f 6 v cc v f 7, v f 8 v cc r2 r2 r1 r1 v ee c null -- + -- + r l ek1, ek2 vg= (e k 1-e k 2)(1+r2 / r1) v f 8-v f 7
la6358n, 6358ns, 6358nm, 6358nt no.5234-5/7 6. svr 7. cs 8. i cc 9. i o source 10. i o sink v cc v f 9, v f 10 v cc 1 v cc 2 r2 r2 r1 r1 v ee v ee c null -- + -- + svr(+)=20 log v f 9-v f 10 (1+r2 / r1)(v cc 1-v cc 2) v cc v f 11, v f 12 v cc r2 r2 r1 r1 v ee v ee 1, v ee 2 c null -- + -- + svr(-)=20 log v f 11-v f 12 (1+r2 / r1)(v ee 1-v ee 2) v in b -- + a a vo a b b c b r2 r l r2 sw : a sw : b r1 r1 -- + a v cc / 2 v cc / 2 v cc / 2 v cc v cc v cc / 2 r l r1 v oa r2 v ob r1 v ob r2 v oa a v cc a v cc la6358n, la6358nm, la6358nt la6358ns a v cc +1v v o -- + a v cc +1v v o -- + supply voltage, v cc ? v supply voltage, v cc ?v i cc -- v cc current dissipation, i cc ?ma 0 1.0 1.5 0.5 2.0 2.5 3.0 3.5 4.0 01015 52025303540 i b -- v cc input bias current, i b ?na 0 20 40 60 80 100 010203040 v cc i cc ta = 0 to +70c -20c
la6358n, 6358ns, 6358nm, 6358nt no.5234-6/7 ambient temperature, ta ? c i o(source) -- ta output current, i o(source) ?ma 0 10 5 20 15 30 25 40 35 50 55 45 60 --20 --10 20 10 040 30 60 70 50 80 frequency, f ? hz v o -- f output voltage range, v out ? vp-p 0 4 8 12 16 20 24 1k 3 25 10k 3 25 100k 3 25 1m frequency, f ? hz vg -- f voltage gain, vg ? db 0 20 40 60 80 100 120 140 1 100 10 1k 10k 100k 10m 1m supply voltage, v cc ?v vg -- v cc voltage gain, vg ? db 0 20 40 60 80 100 120 140 160 01015 52025303540 r l =20k 2k ambient temperature, ta ? c pd max -- ta allowable power dissipation, pd max ? mw 0 100 200 300 400 500 570 600 700 --40 --20 0 20 40 60 80 100 ambient temperature, ta ? c pd max -- ta allowable power dissipation, pd max ? mw 0 50 100 70 150 170 200 --40 --20 0 20 40 60 80 100 ambient temperature, ta ? c pd max -- ta allowable power dissipation, pd max ? mw 0 40 80 120 160 200 240 280 320 --40 --20 0 20 40 60 80 100 la6358n,6358ns la6358nt independent ic la6358nm 15v v in v cc v cc =30v 10 to 15v v in v o v o 7v 100k 10m 0.1 f 2k 1k v cc 2
la6358n, 6358ns, 6358nm, 6358nt ps no.5234-7/7 sample application circuits noninverting dc amplifier inverting ac amplifier rectangular wave oscillator +v in r1 10k r2 1m +v o + -- av=1+ r1 r2 v in c in v o co v cc + -- av= r1 r4 r3 100k r2 100k r1 10k r4 100k r5 6.2k r6 10k f v cc v o + -- r2 100k r4 100k r1 100k 0.001 f c r3 100k this catalog provides information as of july, 2 010. specifications and info rmation herein are subject to change without notice. sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rate d values (such as maximum ra tings, operating condition ranges, or other parameters) listed in products specif ications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qual ity high-reliability products, however, any and all semiconductor products fail or malfunction with some probabi lity. it is possible that these probabilistic failures or malfunction could give rise to acci dents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or e vents cannot occur. such measures include but are not limited to protective circuits and error prevention c ircuits for safe design, redundant design, and structural design. upon using the technical information or products descri bed herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable f or any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagr ams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equi pment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor c o.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities conc erned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any in formation storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd.
|
